Photoelectron energy distribution and spin polarization from activated gallium arsenide
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چکیده
منابع مشابه
Spatially resolved spin-injection probability for gallium arsenide.
We report a large spin-polarized current injection from a ferromagnetic metal into a nonferromagnetic semiconductor, at a temperature of 100 Kelvin. The modification of the spin-injection process by a nanoscale step edge was observed. On flat gallium arsenide [GaAs(110)] terraces, the injection efficiency was 92%, whereas in a 10-nanometer-wide region around a [111]-oriented step the injection ...
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The readout of detector arrays requires the monolithic or hybrid integration of a integrate circuit multiplexer with the detector array. In most LWIR and VLWIR applications, a hybrid approach is used. For example, the detector array may be built from HgCdTe and the readout integrated circuit may be silicon CMOS [1]. The two integrated circuits are mated through a bump-bonding process in which e...
متن کاملGALLIUM ARSENIDE 1. Exposure Data
1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...
متن کاملGALLIUM ARSENIDE 1. Exposure Data
1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...
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ژورنال
عنوان ژورنال: Journal de Physique Lettres
سال: 1983
ISSN: 0302-072X
DOI: 10.1051/jphyslet:0198300440240102700